850-960 mhz applications rf & microwave transistors .230 6lfl (m142) epoxy sealed . 850 - 960 mhz . 24 volts . common emitter . overlay geometry . gold metallization . p out = 6.0 w min. with 10.0 db gain description the SD1398 is a gold metallized epitaxial silicon npn transistor designed for high linearity class ab operation cellular base station applications. the SD1398 can also be operated class c. the SD1398 is internally input matched and can be used as a driver for the sd1423 or sd1424. pin connection branding SD1398 order code SD1398 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 50 v v ces collector-emitter voltage 35 v v ebo emitter-base voltage 3.5 v i c device current 2.4 a p diss power dissipation 53 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 3.3 c/w SD1398 1. collector 3. emitter 2. base thermal data september 8, 1993 1/6
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 850 960 mhz v ce = 24 v i cq = 25 ma 6 w h cf = 850 960 mhz v ce = 24 v i cq = 25 ma 50 % g p f = 850 960 mhz v ce = 24 v i cq = 25 ma 10 12 db c ob f = 1 mhz v cb = 24 v 7.5 8.5 pf note: p in = 0.60w static symbol test conditions value unit min. typ. max. bv cbo i c = 5ma i e = 0ma 50 v bv ceo i c = 5ma i b = 0ma 24 v bv ebo i e = 5ma i c = 0ma 3.5 v i ceo v ce = 24v i e = 0ma 1.0 ma i cbo v cb = 24v i e = 0ma 1.0 ma h fe v ce = 10v i c = 0.1a 20 100 dynamic typical performance class ab broadband output power vs input power output power vs input power SD1398 2/6
z in z cl 850 mhz 900 mhz 960 mhz 850 mhz 900 mhz 960 mhz impedance data freq. z in ( w )z cl ( w ) 850 mhz 2.6 + j 5.4 9.5 + j 13.5 900 mhz 3.3 + j 6.1 9.9 + j 15.0 950 mhz 4.6 + j 5.9 8.6 + j 13.0 SD1398 3/6
c1, c2 c7, c11 : 240pf atc size a c3 : 0.1mfd 50vdc, ck05 type c4, c5 : 1500pf feedthru #9900-381-6004 murata/erie c6, c10 : 0.8 - 8.0pf johanson gigatrim c8 : 0.01 mfd 100vdc ck05 type c9 : 10mfd electrolytic, 63vdc d1 : in5661 fb-1, fb-2 : 2.5 turns, #22 awg, ferrite bead fb-3 : ferrite bead l1 cold end l1 : 3 turns, #22 awg, 0.125" i.d. r1 : 150 w in 5% carbon comp r2 : 51 w , chip resistor board material: er = 10.2, height 0.05", teflon glass test circuit SD1398 4/6
test circuit layout SD1398 5/6
package mechanical data ref.: dwg. no.12-0142 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a SD1398 6/6
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